This system is applied to wafer-level packaging for microsystems such as radio frequency (RF), inertial, and optoelectronic integration.; It is used for homogeneous/heterogeneous bonding of high-end MEMS, high-performance logic devices, and memory chips; it supports 8-inch and 12-inch wafers; optional modules include activation module, alignment module, bonding module and cooling module, which can be flexibly selected according to actual needs.
| Bonding Temperature | RT~550℃ |
| Bonding Pressure | ≤100KN |
| Max Vacuum | 10-6 Pa |
| Alignment Accuracy | ≤1µm |